US9257604B2 - Light-emitting device having a patterned surface - Google Patents
Light-emitting device having a patterned surface Download PDFInfo
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- US9257604B2 US9257604B2 US14/132,819 US201314132819A US9257604B2 US 9257604 B2 US9257604 B2 US 9257604B2 US 201314132819 A US201314132819 A US 201314132819A US 9257604 B2 US9257604 B2 US 9257604B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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Abstract
The disclosure provides a light-emitting device. The light-emitting device comprises: a substrate having a first patterned unit; and a light-emitting stack on the substrate and having an active layer with a first surface; wherein the first patterned unit, protruding in a direction from the substrate to the light-emitting stack, has side surfaces abutting with each other and substantially non-parallel to the first surface in cross-sectional view, and has a non-polygon shape in top view.
Description
This application is a continuation application of U.S. patent application Ser. No. 12/646,553, entitled “A LIGHT-EMITTING DEVICE HAVING A PATTERNED SURFACE”, filed on Dec. 23, 2009, which is a continuation-in-part of U.S. patent application Ser. No. 12/222,548, entitled “Stamp Having Nanoscale Structure And Applications Thereof In Light-Emitting Device”, filed on Aug. 12, 2008 claiming the right of priority based on TW application Ser. No. 097150633 filed on Dec. 24, 2008; the contents of which are incorporated herein by reference in their entirety.
1. Technical Field
The present disclosure relates to a light-emitting device having a patterned surface.
2. Description of the Related Art
Recently, efforts have been devoted to promote the luminance of the light-emitting diode (LED) in order to implement the device in the lighting domain, and further procure the goal of energy conservation and carbon reduction. There are two major aspects to promote luminance. One is to increase the internal quantum efficiency (IQE) by improving the epitaxy quality to enhance the combination efficiency of electrons and holes. The other is to increase the light extraction efficiency (LEE) that emphasizes on the light which is emitted by the light-emitting layer capable of escaping outside the device, and therefore reducing the light absorbed by the LED structure.
Surface roughening technology is one of the efficient methods to enhance luminance. FIG. 7 shows a known LED 700 having a patterned substrate. LED 700 comprises a growth substrate 701, an epitaxial stack, a first electrode 707, and a second electrode 708. The surface 701 a of the growth substrate 701 has a plurality of trapezoid depression for improving the light-extraction efficiency. The epitaxial stack comprises a buffer layer 702 grown on the growth substrate, a non-doped semiconductor layer 703 grown on the buffer layer 702, a first semiconductor layer 704 with first conductivity-type grown on the non-doped semiconductor layer 703, an active layer 705 grown on the first semiconductor layer 704, a second semiconductor layer 706 with second conductivity-type grown on the active layer 705. The first electrode 707 is formed on the exposed first semiconductor layer 704, and the second electrode 708 is formed on the second semiconductor layer 706.
The ratio of the pattern width to the width between patterns of the substrate surface 701 a is generally designed to be around 1. Therefore, a considerable portion of the substrate surface 701 a is still parallel to the surface of the active layer 705 a, and the light emitted from the active layer 705 to the parallel substrate surface is easily reflected back to the epitaxial stack because of total internal reflection (TIR) effect and absorbed by the epitaxial stack to generate heat. It worsens both the light extraction efficiency and the heat dissipation problems. Nevertheless, the pattern is usually formed deeper in order to compensate the light loss due to the parallel (unpatterned) region, but the high aspect ratio of the deeper pattern causes difficulty for subsequently epitaxial growth and adversely affects the epitaxial quality.
Another prior technique for roughen surface is to utilize mechanically polishing method to form a randomly distributed rough patterns on the substrate surface. By this method, it is hard to control the roughened dimension, such as the depth or the width. Moreover, the epitaxial quality is not good by growing an epitaxial layer on the randomly rough surface.
The disclosure provides a light-emitting device. The light-emitting device comprises: a substrate having a first patterned unit; and a light-emitting stack on the substrate and having an active layer with a first surface; wherein the first patterned unit, protruding in a direction from the substrate to the light-emitting stack, has side surfaces abutting with each other and substantially non-parallel to the first surface in cross-sectional view, and has a non-polygon shape in top view.
The pattern units as disclosed in the foregoing embodiments have a relative higher patterned proportion, therefore increase the difficulty to epitaxially grow the subsequently buffer layer and the undoped semiconductor layer. In order to fulfill both light extraction efficiency and internal quantum efficiency, the cross-section of each of the pattern units has a width and a depth smaller than the width, i.e. the ratio of the depth to the width is lower than 1, therefore a pattern unit with a lower aspect ratio is achieved. The subsequently epitaxially grown buffer layer and/or the undoped semiconductor layer are easily filled into the depressed region of the patterned surface to enhance the epitaxial growth quality.
The patterned surface described in the above-mentioned embodiments is not limited to be formed on any surface of any specific structure of the light-emitting device in accordance with the present disclosure. It is still under the scope of the disclosure to form the patterned surface on any structure of the light-emitting device in accordance with the present disclosure. For example, the patterned surface can be formed on the light output surface of the light-emitting device contacting with the surroundings. The neighboring materials neighbored to the patterned structure includes but not limited to any structure of the light-emitting device, the encapsulating material, or the environmental medium having a different refraction index from the patterned structure. The difference of the refraction indexes of the patterned structure and the neighboring material is at least 0.1.
The materials of the buffer layer, the undoped semiconductor layer, the first contact layer, the first cladding layer, the second cladding layer, the second contact layer, and the active layer comprise III-V compound materials, e.g. AlpGaqIn(l-p-q)P or AlxInyGa(l-x-y)N, wherein, 0≦p, q, x, y≦1; (p+q)≦1; (x+y)≦1. The first conductivity-type comprises n-type or p-type. The second conductivity-type comprises n-type or p-type and is different to the first conductivity-type. The current spreading layer comprises metal oxide, e.g. ITO, or well-conductive semiconductor layer of phosphide or nitride having high impurity concentration. The growth substrate comprises at least one material selected from the group consisting of GaP, sapphire, SiC, GaN, and AlN. The second substrate comprises a transparent material selected from the group consisting of GaP, sapphire, Sic, GaN, and AlN, or a heat dissipating material selected from the group consisting of diamond, diamond-like-carbon (DLC), ZnO, Au, Ag, Al, and other metals.
It will be apparent to those having ordinary skill in the art that various modifications and variations can be made to the methods in accordance with the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the present disclosure cover modifications and variations of this disclosure provided they fall within the scope of the following claims and their equivalents.
Claims (16)
1. A light-emitting device comprising:
a substrate having a top surface and a first patterned unit bulged on the top surface; and
a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface;
wherein a base of the first patterned unit has a non-polygon shape in a top view, and in a cross-sectional view the first patterned unit has a vertex, a first inclined line segment, and a second inclined line segment, and the first inclined line segment and the second inclined line segment connect at the vertex.
2. The light-emitting device according to claim 1 , wherein the non-polygon shape is a first circular shape.
3. A light-emitting device comprising:
a substrate having a top surface and a first patterned unit bulged on the top surface; and
a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface,
wherein the first patterned unit has a non-polygon in a top view, and a first inclined line and a second inclined line directly connected to the top surface to form a vertex in a cross-sectional view, and
wherein the first patterned unit is substantially formed in a V-shape in the cross-sectional view.
4. The light-emitting device according to claim 2 , further comprising a second patterned unit, wherein a base of the second patterned unit has a second circular shape in the top view.
5. The light-emitting device according to claim 4 , wherein the second circular shape has an area different from that of the first circular shape.
6. The light-emitting device according to claim 1 , wherein the first patterned unit is between the substrate and the light-emitting stack.
7. The light-emitting device according to claim 6 , further comprising an undoped semiconductor layer formed on the substrate and enclosing the first patterned unit.
8. The light-emitting device according to claim 1 , wherein the first patterned unit has a width and a depth smaller than the width.
9. The light-emitting device according to claim 1 , wherein the substrate comprises GaP, sapphire, GaN, or AlN.
10. The light-emitting device according to claim 1 , wherein the first inclined line segment and second inclined line segment are substantially straight lines.
11. The light-emitting device according to claim 1 , wherein the substrate comprises a non-patterned area parallel to the first surface and not greater than 10% of a total area of the substrate.
12. The light-emitting device according to claim 1 , further comprising a neighboring material with a refraction index different from that of the substrate.
13. The light-emitting device according to claim 4 , wherein the first patterned unit is adjacent to the second patterned unit.
14. A light-emitting device comprising:
a substrate having a top surface and a plurality of first patterned units bulged on the top surface; and
a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface,
wherein each of the plurality of first patterned units has a non-polygon shape in a top view, and a first inclined line and a second inclined line directly connected to the top surface to form a vertex in a cross-sectional view, and
wherein each of the plurality of first patterned units is substantially formed in a V-shape in the cross-sectional view.
15. The light-emitting device according to claim 14 , wherein one of the plurality of first patterned units is adjacent to another one of the plurality of first patterned units.
16. The light-emitting device according to claim 14 , further comprising a plurality of second patterned unit, wherein the plurality of first patterned units and the plurality of second patterned unit are arranged in a row.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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US14/132,819 US9257604B2 (en) | 2008-08-12 | 2013-12-18 | Light-emitting device having a patterned surface |
US14/997,258 US9608162B2 (en) | 2008-08-12 | 2016-01-15 | Light-emitting device having a patterned surface |
US15/428,395 US9847451B2 (en) | 2008-08-12 | 2017-02-09 | Light-emitting device having a patterned surface |
US15/821,147 US10181549B2 (en) | 2008-08-12 | 2017-11-22 | Light-emitting device having a patterned surface |
US16/214,667 US10522715B2 (en) | 2008-08-12 | 2018-12-10 | Light-emitting device having a patterned surface |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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US12/222,548 US8791029B2 (en) | 2007-08-13 | 2008-08-12 | Stamp having nanoscale structure and applications therefore in light-emitting device |
TW97150633A TWI398023B (en) | 2008-12-24 | 2008-12-24 | A light-emitting device having a patterned surface |
TW097150633 | 2008-12-24 | ||
TW97150633A | 2008-12-24 | ||
US12/646,553 US8633501B2 (en) | 2008-08-12 | 2009-12-23 | Light-emitting device having a patterned surface |
US14/132,819 US9257604B2 (en) | 2008-08-12 | 2013-12-18 | Light-emitting device having a patterned surface |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US12/646,553 Continuation US8633501B2 (en) | 2008-08-12 | 2009-12-23 | Light-emitting device having a patterned surface |
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US14/997,258 Continuation US9608162B2 (en) | 2008-08-12 | 2016-01-15 | Light-emitting device having a patterned surface |
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US20140103376A1 US20140103376A1 (en) | 2014-04-17 |
US9257604B2 true US9257604B2 (en) | 2016-02-09 |
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US14/132,819 Active US9257604B2 (en) | 2008-08-12 | 2013-12-18 | Light-emitting device having a patterned surface |
US14/997,258 Active US9608162B2 (en) | 2008-08-12 | 2016-01-15 | Light-emitting device having a patterned surface |
US15/428,395 Active US9847451B2 (en) | 2008-08-12 | 2017-02-09 | Light-emitting device having a patterned surface |
US15/821,147 Active US10181549B2 (en) | 2008-08-12 | 2017-11-22 | Light-emitting device having a patterned surface |
US16/214,667 Active US10522715B2 (en) | 2008-08-12 | 2018-12-10 | Light-emitting device having a patterned surface |
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US12/646,553 Active 2029-11-08 US8633501B2 (en) | 2008-08-12 | 2009-12-23 | Light-emitting device having a patterned surface |
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US14/997,258 Active US9608162B2 (en) | 2008-08-12 | 2016-01-15 | Light-emitting device having a patterned surface |
US15/428,395 Active US9847451B2 (en) | 2008-08-12 | 2017-02-09 | Light-emitting device having a patterned surface |
US15/821,147 Active US10181549B2 (en) | 2008-08-12 | 2017-11-22 | Light-emitting device having a patterned surface |
US16/214,667 Active US10522715B2 (en) | 2008-08-12 | 2018-12-10 | Light-emitting device having a patterned surface |
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Also Published As
Publication number | Publication date |
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US20160133789A1 (en) | 2016-05-12 |
US20170155015A1 (en) | 2017-06-01 |
US10181549B2 (en) | 2019-01-15 |
US20100096657A1 (en) | 2010-04-22 |
US9608162B2 (en) | 2017-03-28 |
US20140103376A1 (en) | 2014-04-17 |
US20180108808A1 (en) | 2018-04-19 |
US10522715B2 (en) | 2019-12-31 |
US8633501B2 (en) | 2014-01-21 |
US9847451B2 (en) | 2017-12-19 |
US20190115500A1 (en) | 2019-04-18 |
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